Graphene/GaAs heterostructure based Millimeter/Terahertz wave photodetector

1.Shanghai Normal University, Shanghai 200234, China;2.State Key Laboratory of Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

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Supported by National Natural Science Foundation(61474130) and Shanghai Natural Science Foundation( 19ZR1465400, 18590780100, 19590711600)

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    The low intrinsic absorption and the existence of the inherent defects hamper the monoatomic layer graphene from being a high-performance photoelectric material, which leads to the strategy to form heterostructure by combining graphene with semiconductor materials. In this work, a graphene/GaAs heterostructure based photodetector has been designed and fabricated, in which the two-dimensional electron gas are enhanced to improve the photoresponse ability at the band of sub-millimeter and Terahertz (THz) wave ranging from 20 GHz to 0.12 THz. Under 25 GHz radiation, the responsivity of photodetector at room temperature (RT) reaches 20.6 V?W-1, with the response time of 9.8 μs and the noise equivalent power (NEP) of 3.2×1010 W?Hz-1/2 under a bias of 400 mV. At 0.12 THz, the responsivity is determined to be 4.6 V?W-1, with the response time of 10 μs. And a NEP of 1.4×10-9 W?Hz-1/2 can be achieved under the bias of 400 mV. These results exhibit great application potential for the graphene/GaAs heterostructure based THz photodetectors.

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XU Kai-Qi, XU Huang, ZHANG Jia-Zhen, WU Xiang-Dong, YANG Lu-Han, ZHOU Jie, LIN Fang-Ting, WANG Lin, CHEN Gang. Graphene/GaAs heterostructure based Millimeter/Terahertz wave photodetector[J]. Journal of Infrared and Millimeter Waves,2020,39(5):533~539

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  • Received:December 10,2019
  • Revised:May 14,2020
  • Adopted:January 18,2020
  • Online: August 18,2020
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