1.State Key Laboratory of Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083,China;2.College of Material Science and Opto-Electronic Technology, University of Chinese Academy of Sciences, Beijing 100049,China;3.Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-Dimensional Semiconductor Materials and Devices, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
Research Project of Xian Polytechric University 107020492;National Natural Science Foundation of China 51905405;Natural Science Basic Research Plan in Shannxi Province of China 2019JQ-855Supported by Research Project of Xian Polytechric University (107020492) National Natural Science Foundation of China (51905405),Natural Science Basic Research Plan in Shannxi Province of China (2019JQ-855)
Long-wavelength VCSELs on an InP substrate was designed and fabricated with an active layer of 1550 nm. The top Distributed Bragg Reflection （DBR） mirror system has been constructed by fabricating 4.5 pairs of SiO2/Si top DBRs. The threshold current was 20 mA and maximum output power around 7 μW under continuous wave （CW） operation at room temperature. More importantly, the lasing spectrum is 1554 nm and the full width at half maximum is 3 nm.
LIU Li-Jie, WU Yuan-Da, WANG Yue, WANG Liang-Liang, An Jun-Ming, ZHAO You-Wen.1550 nm VCSELs for long-reach optical interconnects[J]. Journal of Infrared and Millimeter Waves,2020,39(4):397~400Copy