Optimization of InAlAsSb SACM APD with a heterojunction multiplication layer
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Affiliation:

School of Electronic and Information Engineering, Soochow University, Suzhou 215006, China

Clc Number:

TN215;TN362

Fund Project:

National Natural Science Foundation of China 61774108Supported by National Natural Science Foundation of China (61774108)

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    Abstract:

    For avalanche photodiodes (APDs), low operation voltage is required for integrated circuit stability and low power consumption. In this paper, a model for InAlAsSb separate absorption, charge, and multiplication (SACM) APD is established. To get higher gain at lower reversed bias voltage without sacrificing the operating voltage range, a high/low band gap multiplication layer is adopted. The effects of the thickness and doping concentration of the multiplication layer on the dark-current and the break-down voltage have been investigated. By optimization of the doping concentration, the break-down voltage and punch-through voltage can be decreased simultaneously.

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JIANG Yi, CHEN Jun. Optimization of InAlAsSb SACM APD with a heterojunction multiplication layer[J]. Journal of Infrared and Millimeter Waves,2019,38(5):598~603

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History
  • Received:January 12,2019
  • Revised:July 13,2019
  • Adopted:March 08,2019
  • Online: August 31,2019
  • Published: