HgCdTe avalanche photodiode FPA

doi:10.11972/j.issn.1001 -9014.2019.05.007

Home > Archive>Volume 38, Issue 5, 2019 >587-590. DOI:10.11972/j.issn.1001 -9014.2019.05.007

HgCdTe avalanche photodiode FPA
DOI:
                        10.11972/j.issn.1001 -9014.2019.05.007
                    
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                        [cstr]
                    
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Affiliation:1.Key Laboratory of Infrared Imagining Material and Detectors,Shanghai Institute of Technical Physics, Chinese Academy of Science, Shanghai 200083, China;2.University of Chinese Academy of Science, Beijing 100049, China;3.ShanghaiTech University, Shanghai 201210, China
Clc Number:TN215
Fund Project:National Natural Science Foundation of China 61705247Supported by National Natural Science Foundation of China(61705247)

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Abstract:

HgCdTe APD is one of the developing trends of third generation inferred FPA detectors. In this paper we report the result on a 1616 arrays of HgCdTe avalanche photodiode with 3.56 μm cutoff wavelength. The operability in gain exceeds 90% and relative gain dispersion is lower than 20%. NEPh is about 60 at 6 V bias with excess noise factor close to 1.2.

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LI Hao, LIN Chun, ZHOU Song-Min, GUO Hui-Jun, WANG Xi, CHEN Hong-Lei, WEI Yan-Feng, CHEN Lu, DING Rui-Jun, HE Li. HgCdTe avalanche photodiode FPA[J]. Journal of Infrared and Millimeter Waves,2019,38(5):587~590

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Received:January 09,2019
Revised:July 08,2019
Adopted:March 19,2019
Online: August 31,2019
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