LiTaO3 thin films were prepared on the ITO substrate by sol-gel methods. The performance parameters such as orientation, surface morphology, grain size and the thickness of LiTaO3 thin film were studied by XRD, SEM and AFM. The influence of different solvents on the stability of LiTaO3 sols and the influence of different annealing condition on the prepa- ration of LiTaO3 thin film were analyzed either. The relative dielectric coefficient and dielectric loss of the prepared LiTaO3 thin film were measured by using Al/LiTaO3/ITO structure electrode. The experimental results show that the quality of LiTaO3 thin film with every layer crystallized annealing is better than that with pyrolyzed and crystallized annealing alternately. The relative dielectric coefficient is about 53 and dielectric loss is about O. 4 when the measured frequency is 1 kHz. The reason of increaing the dielectric loss of LiTaO3 thin film has been discussed.