STUDY ON THE PASSIVATION OF Hg1-xCdxTe PHOTOVOLTAIC DETECTORS
DOI:
CSTR:
Author:
Affiliation:

Clc Number:

TN215 O436.3

Fund Project:

  • Article
  • |
  • Figures
  • |
  • Metrics
  • |
  • Reference
  • |
  • Related
  • |
  • Cited by
  • |
  • Materials
  • |
  • Comments
    Abstract:

    The epitaxial layers of HgCdTe passivated by CdTe and ZnS were investigated with high resolution reciprocal space mapping of X ray diffraction. It was found that the wafers of HgCdTe were bended and mosaic structures were also observed because of the sputtered passivation layers, and the bended wafers and mosaic structures could be recoverred by suitable heating treatment. The experimental results also show that ZnS lacks stability in the high temperature as passivation layer, but CdTe shows excellent performance of high temperature resistance.

    Reference
    Related
    Cited by
Get Citation

SUN Tao, LI Yan Jin, WANG Qing Xue, CHEN Xing Guo, HU Xiao Ning, HE Li. STUDY ON THE PASSIVATION OF Hg1-xCdxTe PHOTOVOLTAIC DETECTORS[J]. Journal of Infrared and Millimeter Waves,2004,23(6):469~472

Copy
Share
Article Metrics
  • Abstract:
  • PDF:
  • HTML:
  • Cited by:
History
  • Received:
  • Revised:September 03,2003
  • Adopted:
  • Online:
  • Published:
Article QR Code