LaNiO 3 thin films on Si(100) substrates were prepared using chemical solution decomposition method (CSD). The effects of annealing atmosphere (air and oxygen) on the crystallinity, grain size and resistivity of LaNiO 3 thin films, and the PZT films grown on the LNO layers were studied. The results showed that the value of the resistivity of the LaNiO 3 thin films annealed in oxygen is only half of that obtained in air. The conductive mechanism of LaNiO 3 thin films was discussed.