A STUDY OF ELECTRICAL CHARACTERISTICS FOR BORON IMPLANTATION OF MBE GROWN HgCdTe
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TN213 TN304.26

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    Abstract:

    The electrical property of boron implantation of MBE grown HgCdTe and the profile of carrier concentration and mobility measured by sheet Hall were presented. After etching the epilayer to p n junction position, the transmittance of this position was raised, which was ascribed to the high transmission of junction region.

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HUANG Gen Sheng JI Rong Bin FANG Wei Zheng YANG Jian Rong CHEN Xin Qiang HE Li. A STUDY OF ELECTRICAL CHARACTERISTICS FOR BORON IMPLANTATION OF MBE GROWN HgCdTe[J]. Journal of Infrared and Millimeter Waves,1999,18(1):19~22

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