The photoluminescence(PL) properties of nitrogen doped ZnSe epilayers grown on semi insulating GaAs(100) substrates by MBE using a rf plasma source for N doping were investigated. The PL peak which can be related to N acceptor was observed in the PL spectra of ZnSe:N smaples. At 10K, as the excitation power density increases, the energy of donor acceptor pair(DAP) emission shows a blue shift and its intensity tends to saturate. As the temperature increases over a range from 10K to 300K, the relative PL intensity of donor bound exciton to that of the acceptor bound exciton increases due to the transfer between two bound excitons.