TEMPERATURE DEPENDENCE OF EXCITON LINEWIDTHS IN NARROW GaAs/AlGaAs AND InGaAs/AlGaAs QUANTUM WELLS
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O471.3 TN201
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Abstract:
Temperature dependence of exciton linewidths in GaAs/AlGaAs and InGaAs/AlGaAs quantum wells with very narrow well widths was investigated.The increase of the acoustic phonon linear scattering coefficient was found with decreasing well width in low temperature range.The experimental results were discussed.
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. TEMPERATURE DEPENDENCE OF EXCITON LINEWIDTHS IN NARROW GaAs/AlGaAs AND InGaAs/AlGaAs QUANTUM WELLS[J]. Journal of Infrared and Millimeter Waves,1996,15(4):291~296