study of the 1.13eV photoluminescence(PL)band in GaAs epilayers grown on St by metal-organic chemical vapor deposition(MOCVD)was made at various temperatures and excitation intensities. The 1.13eV PL band can be explained in terms of the recombination luminescence of the donor-acceptor pair. Changes in PL emission energy and PL intensity as a function of temperature and excitation intensity lead to the identification of a 295meV deep acceptor and a smeV shallow donor.It was verified that the 1.13 eV PL band originates from the recombination luminescence of a St donor on Ga site and the nextnearest neighbor Ga vacancy acceptor.
Zhao Jialong, Gao Ying, Liu Xueyan, Don Kai, Huang Shihua, Yu Jiaqi. CHANACTERISTIC STUDY OF 1. 13eV PBOYOLUMINESCENCE BAND IN GaAs EPILAYERS GROWN ON Si BY MOCVD[J]. Journal of Infrared and Millimeter Waves,1995,14(4):271~276Copy