CHANACTERISTIC STUDY OF 1. 13eV PBOYOLUMINESCENCE BAND IN GaAs EPILAYERS GROWN ON Si BY MOCVD
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O482.31 O471

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    Abstract:

    study of the 1.13eV photoluminescence(PL)band in GaAs epilayers grown on St by metal-organic chemical vapor deposition(MOCVD)was made at various temperatures and excitation intensities. The 1.13eV PL band can be explained in terms of the recombination luminescence of the donor-acceptor pair. Changes in PL emission energy and PL intensity as a function of temperature and excitation intensity lead to the identification of a 295meV deep acceptor and a smeV shallow donor.It was verified that the 1.13 eV PL band originates from the recombination luminescence of a St donor on Ga site and the nextnearest neighbor Ga vacancy acceptor.

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Zhao Jialong, Gao Ying, Liu Xueyan, Don Kai, Huang Shihua, Yu Jiaqi. CHANACTERISTIC STUDY OF 1. 13eV PBOYOLUMINESCENCE BAND IN GaAs EPILAYERS GROWN ON Si BY MOCVD[J]. Journal of Infrared and Millimeter Waves,1995,14(4):271~276

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