STUDY OF INFRARED ABSORPTION SPECTRA OF Hg1-xCdxTe/CdTe/GaAs FILMS GROWN BY MOCVD
DOI:
Author:
Affiliation:

Clc Number:

O434.33

Fund Project:

  • Article
  • |
  • Figures
  • |
  • Metrics
  • |
  • Reference
  • |
  • Related
  • |
  • Cited by
  • |
  • Materials
  • |
  • Comments
    Abstract:

    The transmittance, absorption edge and interference behaviors were calculated theoretically for the Hg1-xCdxTe/CdTe/GaAs materials grown by MOCVD. The calculation results show that the transmittance of Hg1-xCdxTe film can not reveal the material quajity as that of bulk material. The relationship between the interference wave and Hg1-xCdxTe film thickness is discussed. It also can be found from the calculation of the absorption edge that the composition uniformity of the film has great influence on the absorption edge of the infrared spectra. By analyzing the spectrum properties measured in the experiments, a kind of partial saturated growth mechanism is discovered for MOCVD. Besides, it is found that the HgTe film has also a certain transmission to infrared radiation.

    Reference
    Related
    Cited by
Get Citation

Yang Jianrong, He Jin, Shen Shouzheng Ma Kejun, Yu Zhenzhong. STUDY OF INFRARED ABSORPTION SPECTRA OF Hg1-xCdxTe/CdTe/GaAs FILMS GROWN BY MOCVD[J]. Journal of Infrared and Millimeter Waves,1994,13(3):

Copy
Share
Article Metrics
  • Abstract:
  • PDF:
  • HTML:
  • Cited by:
History
  • Received:
  • Revised:
  • Adopted:
  • Online:
  • Published: