ANALYSIS OF GaAs/Al_xGa_(1-x) As MULTIPLE QUANTUM WELL INFRARED DETECTOR STRVCTURES USING PHOTOREFLECTANCE
DOI:
Author:
Affiliation:

Clc Number:

TN215

Fund Project:

  • Article
  • |
  • Figures
  • |
  • Metrics
  • |
  • Reference
  • |
  • Related
  • |
  • Cited by
  • |
  • Materials
  • |
  • Comments
    Abstract:

    Photoreflectance (PR) spectroscopy was used to analyze the GaAs/AlGaAs multiple quantum well (MQW) infrared detector structures. The result shows that the important parameters such as the well width, the aluminum composition x, the energy of intersubband transitions and peak wavelength of the detector can be exactly deterllilned by PR spectroscopy. The calculated energies of intersubband transition based on the Kronig-Penny model were compared and proved to be in agreement with the experimental results.

    Reference
    Related
    Cited by
Get Citation

Yang Laxin, Jiang Shan, Mao Huibing, Lu Wei, Shen Xuechu. ANALYSIS OF GaAs/Al_xGa_(1-x) As MULTIPLE QUANTUM WELL INFRARED DETECTOR STRVCTURES USING PHOTOREFLECTANCE[J]. Journal of Infrared and Millimeter Waves,1994,13(1):

Copy
Share
Article Metrics
  • Abstract:
  • PDF:
  • HTML:
  • Cited by:
History
  • Received:
  • Revised:
  • Adopted:
  • Online:
  • Published: