The study of the experimental results in asymmetric GaAs/Al_(0.3)Ga_(0.7)As double quantum wells (DQW) structure by using photoreflectance (PR) and photoluminescence (PL) techniques is presented. PR spectra were given at 300 K and 77K, respectively. With a least square fit of a line-shape function, the transition above E_0(GaAs) can clearly be identified as confined 11H, 11L, 13H and 22H in the DQW. The comparison of the experimental intersubband energies with an envelope-function calculation was obtained. An argon-ion laser operating at 488 nm was used for a photoexciting source and the PL peak intensities related to 11H transition measured at 4K were obtained and the nonlinear optical effect was discussed. PL peak intensities as a function of temperature for 11H transition, E_(01) and E_(02) were measured by using a 632.8 nm laser of low excited intensity and the results were analyzed.