PERMANENT PHOTOCONDUCTIVITY AND BAND OFFSETS IN PbTe/Pb_(0.88)Sn_(0.12)Te MULTI-QUANTUM WELLS GROWN BY MBE
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    Abstract:

    The low temperature permanent photoconductivity in PbTe/Pb_(0.88)Sn_(0.12)Te multi-quantum wells grown by molecular beam epitaxy was studied both theoretically and experimentally. The decay of the photoconductivity was analyzed in terms of tunneling-as- sisted electron-trap recombination. The theoretical result agrees with the experimental one. The band offsets of both the [111] valley and the others at PbTe/Pb_(0.88)Sn_(0.12)Te interfaces were estimated by fitting the calculated decay curve of the photoconductivity to the experi- ment data.

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Song Hang, Chen Weili, Shi Zhisheng, Fu Yi. PERMANENT PHOTOCONDUCTIVITY AND BAND OFFSETS IN PbTe/Pb_(0.88)Sn_(0.12)Te MULTI-QUANTUM WELLS GROWN BY MBE[J]. Journal of Infrared and Millimeter Waves,1992,11(5):

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