High efficiency 220 GHz frequency doubler based on discrete Schottky diodes
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Affiliation:

1.Microsystem and Terahertz Research Center,China Academy of Engineering Physics,Chengdu 610200,China;2.Institute of Electronic Engineering,China Academy of Engineering Physics,Mianyang 621900,China

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Fund Project:

the National Key Basic Research Program of China 2015CB755406;the Defense Industrial Technology Development Program JCKY2016212C045 JCKY2017212C002Supported by the National Key Basic Research Program of China (2015CB755406), the Defense Industrial Technology Development Program (JCKY2016212C045, JCKY2017212C002)

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    Abstract:

    A high efficiency 220 GHz frequency doubler based on discrete diodes is presented in this paper. This doubler is realized with a 50-μm-thick, 450-μm-wide, and 2.7-mm-long quartz substrate. The conversion efficiency is better than 16% over the frequency range from 214 to 226 GHz with pumping power of 46.4~164 mW at the indoor temperature. A peak output power of 32mW at 218 GHz with an input power of 161 mW, and several frequency points with efficiency high than 20% are realized. This doubler can act as the pumping stage of the 660 GHz multiplier chain.

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TIAN Yao-Ling, MIAO Li, HUANG Kun, JIANG Jun, CEN Ji-Na, HAO Hai-Long, HE Yue. High efficiency 220 GHz frequency doubler based on discrete Schottky diodes[J]. Journal of Infrared and Millimeter Waves,2019,38(4):426~432

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History
  • Received:December 20,2018
  • Revised:May 26,2019
  • Adopted:February 27,2019
  • Online: September 06,2019
  • Published: