Real-time γ irradiation effects on long-wavelength InAs/GaSb type II superlattice infrared detector

doi:10.11972/j.issn.1001-9014.2017.06.009

Home > Archive>Volume 36, Issue 6, 2017 >688-693. DOI:10.11972/j.issn.1001-9014.2017.06.009

Real-time γ irradiation effects on long-wavelength InAs/GaSb type II superlattice infrared detector
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                        10.11972/j.issn.1001-9014.2017.06.009
                    
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Affiliation:Key Laboratory of Infrared Imaging Materials and Detector,Shanghai Institute of Technical Physics,Chinese Academy of Sciences shanghai,Key Laboratory of Infrared Imaging Materials and Detector,Shanghai Institute of Technical Physics,Chinese Academy of Sciences shanghai,: Key Laboratory of Infrared Imaging Materials and Detector,Shanghai Institute of Technical Physics,Chinese Academy of Sciences shanghai,Key Laboratory of Infrared Imaging Materials and Detector,Shanghai Institute of Technical Physics,Chinese Academy of Sciences shanghai,: Key Laboratory of Infrared Imaging Materials and Detector,Shanghai Institute of Technical Physics,Chinese Academy of Sciences shanghai,Key Laboratory of Infrared Imaging Materials and Detector,Shanghai Institute of Technical Physics,Chinese Academy of Sciences shanghai,Key Laboratory of Infrared Imaging Materials and Detector,Shanghai Institute of Technical Physics,Chinese Academy of Sciences shanghai,: Key Laboratory of Infrared Imaging Materials and Detector,Shanghai Institute of Technical Physics,Chinese Academy of Sciences shanghai,Key Laboratory of Infrared Imaging Materials and Detector,Shanghai Institute of Technical Physics,Chinese Academy of Sciences shanghai,Key Laboratory of Infrared Imaging Materials and Detector,Shanghai Institute of Technical Physics,Chinese Academy of Sciences shanghai,Key Laboratory of Infrared Imaging Materials and Detector,Shanghai Institute of Technical Physics,Chinese Academy of Sciences shanghai
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Abstract:

In this paper, the γ-irradiation effect on InAs / GaSb II superlattice long-wave detectors was studied. The detector has a good anti-radiation performance under the irradiation of ₆₀Co γ-rays as the current-voltage (I-V) characteristics of the devices did not change significantly with the increase of the irradiation dose. And compared with the value before irradiation, the reduction rate of the zero-bias resistance was only 3.4% under the irradiation dose of 100Krad (Si). By combining the real-time I-V curves at different irradiation doses and the evolution of the dark current with time after the irradiation, the damage and the corresponding mechanism of the γ-irradiation were analyzed. At zero bias as well as small reverse bias, the current is obviously increased after irradiation. The radiation damage is dominated by the transient ionization effect, and the device performance can be recovered in a short time. While at large reverse bias, the main dark current mechanism is the direct tunneling current, leading to a decreased dark current with the increase of the irradiation dose. The time of the damage recovery is significantly longer than the ionization damage, and an annealing may be required.

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JIN Chuan, XU Jia-Jia, HUANG Ai-Bo, XU Zhi-Cheng, ZHOU Yi, BAI Zhi-Zhong, WANG Fang-Fang, CHEN Jian-Xin, CHEN Hong-Lei, DING Rui-Jun, HE Li. Real-time γ irradiation effects on long-wavelength InAs/GaSb type II superlattice infrared detector[J]. Journal of Infrared and Millimeter Waves,2017,36(6):688~693

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Received:January 20,2017
Revised:February 20,2017
Adopted:February 22,2017
Online: November 30,2017
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