Development of 330GHz receiver front-end with GaAs Schottky diodes

Science and Technology on Monolithic Integrated Circuits and Modules Laboratory,Nanjing Electronic Devices Institute,Nanjing Jiangsu,Nanjing University of Information Science and Technology,Nanjing University of Information Science and Technology

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    A 310-330GHz receiver front-end with Schottky diode is designed and tested. The receiver first stage is a subharmonic mixer (SHM), in order to lower conversion loss (CL) and improve receiver sensitivity, the diode parasitic parameters such as the air-bridges inductance and their mutual inductance are discussed. The diode RF, LO and IF port impedance are calculated with embedding analysis for circuit optimization and the simulated CL accuracy is improved. The LO sources is realized by a ×6×2 multiplying chain, in which the sextupler is a commercial active multiplying chip, and the balanced doubler is realized by a anti-series Schottky diode mounted on a suspended line. The chain can generate 10dBm output power at 165GHz and its generated power is applied to pump the receiver SHM. The receiver second stage is a low noise IF amplifier for lowering system noise figure. In the frequency range of 310-330GHz, the measured receiver noise figure is lower than 10.5dB, and its minimum value is 8.5dB at 325GHz. The receiver gain is 31±1dB.

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YAO Chang-Fei, CHEN Zhen-Hua, GE Jun-Xiang. Development of 330GHz receiver front-end with GaAs Schottky diodes[J]. Journal of Infrared and Millimeter Waves,2017,36(4):446~452

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  • Received:December 07,2016
  • Revised:April 14,2017
  • Adopted:January 22,2017
  • Online: August 29,2017
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