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Home > Archive>Volume 36, Issue 5, 2017 >589-593. DOI:10.11972/j.issn.1001-9014.2017.05.013
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Shallow impurity levels in CdZnTe probed by magneto-photoluminescence
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The Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,The Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,The Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,The Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,The Shanghai Institute of Technical Physics of the Chinese Academy of Sciences,The Shanghai Institute of Technical Physics of the Chinese Academy of Sciences

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    Abstract:

    This paper reports photoluminescence (PL) and magneto-PL study of CdZnTe single crystal grown by Bridgman method. Magneto-PL measurements on two CdZnTe samples in the sample crystal were realized at low temperature with sufficiently high spectral resolution and signal-to-noise ratio. PL spectra reveal that the Te inclusions near the CdZnTe surface affects obviously the PL processes energetically below 1.5 eV. Further analysis with curve-fitting process shows that (1) stress distribution exists inside the CdZnTe sample without Te inclusions, and the stress causes the splitting of the heavy-and light-hole subband. (2) The 1.57-eV PL feature originates from the shallow-donor to valence-band recombination.

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QI Zhen, SHENG Feng-Feng, ZHU Liang, YANG Jian-Rong, CHEN Xi-Ren, SHAO Jun. Shallow impurity levels in CdZnTe probed by magneto-photoluminescence[J]. Journal of Infrared and Millimeter Waves,2017,36(5):589~593

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History
  • Received:October 20,2016
  • Revised:April 16,2017
  • Adopted:April 20,2017
  • Online: November 29,2017
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