A prototype photon detector based on interband transition of quantum wells
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Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Key Laboratory for Renewable Energy,Beijing Key Laboratory for New Energy Materials and Devices,Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences

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    Abstract:

    Recently, a high localized carrier extraction efficiency and increasing of absorption coefficient was observed in low-dimensional semiconductors within a PN junction. Such phenomenon provides the possibility of fabricating novel high performance quantum well interband transition detector. In this work, we report the performance of the first photon detector based on the interband transition of strained InGaAs/GaAs quantum wells. The external quantum efficiency was measured to be 31% using only 100nm effective absorption thickness without an anti-reflection layer. Such high value leads to an absorption coefficient of 3.7×104 cm-1 which is obviously larger than previously reported values. The results here demonstrate the possibility of fabricating high performance and low cost infrared photon detectors.

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LIU Jie, WANG Lu, JIANG Yang, MA Zi-Guang, WANG Wen-Qi, SUN Ling, JIA Hai-Qiang, WANG Wen-Xin, CHEN Hong. A prototype photon detector based on interband transition of quantum wells[J]. Journal of Infrared and Millimeter Waves,2017,36(2):129~134

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History
  • Received:August 23,2016
  • Revised:September 13,2016
  • Adopted:October 08,2016
  • Online: April 28,2017
  • Published: