CHEN Xiu-Yan
Shanghai Key Laboratory of Solid State Laser and Application,Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of SciencesZHANG Pei-Xiong
Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of SciencesFENG Yan
Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of SciencesHANG Yin
Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of SciencesJIANG Hua-Wei
Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of SciencesShanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences/Shenyang Normal University,Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences,Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences,Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences
The threshold power of 1.2 μm laser generated from the Ho3+: LLF crystal was discussed. Two typical quasi-three-level theoretical models were used to analyze the effectiveness of 1194 nm laser's threshold power in the in-band pumping source of 1.15 μm fiber laser with different parameters, such as the absorption coefficient of laser medium, the laser beam radius, the crystal length and reflectivity of the output mirror. It was found that the re-absorption loss was the most important factor leading to the different results for the two models, and the second model was close to the practice because of the narrow bandwidth pumping beam(<6 nm). The results provided reliable data of Ho3+-doped 1.2 μm solid-state laser systems for the design and experimental research in further.
CHEN Xiu-Yan, ZHANG Pei-Xiong, FENG Yan, HANG Yin, JIANG Hua-Wei. Threshold power of 1.2 μm infrared laser by in-band pumped Ho3+-doped crystal[J]. Journal of Infrared and Millimeter Waves,2017,36(1):20~24
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