fT=220 GHz InAlN/GaN HFETs with regrown ohmic contacts
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National Key Laboratory of Application Specific Integrated CircuitASIC,Hebei Semiconductor Research Institute,National Key Laboratory of Application Specific Integrated CircuitASIC,Hebei Semiconductor Research Institute,National Key Laboratory of Application Specific Integrated CircuitASIC,Hebei Semiconductor Research Institute,National Key Laboratory of Application Specific Integrated CircuitASIC,Hebei Semiconductor Research Institute,National Key Laboratory of Application Specific Integrated CircuitASIC,Hebei Semiconductor Research Institute,National Key Laboratory of Application Specific Integrated CircuitASIC,Hebei Semiconductor Research Institute,National Key Laboratory of Application Specific Integrated CircuitASIC,Hebei Semiconductor Research Institute,National Key Laboratory of Application Specific Integrated CircuitASIC,Hebei Semiconductor Research Institute

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    Abstract:

    Scaled InAlN/GaN heterostructure field-effect transistors (HFETs) with high unity current gain cut-off frequency (fT) on sapphire substrate were fabricated and characterized. In this device, scaled source-to-drain distance (Lsd) of 600 nm was realized by metal organic chemical vapor deposition (MOCVD) based on regrow nonalloyed n+-GaN Ohmic contacts. Moreover, a 50 nm rectangular gate was fabricated by self-aligned-gate technology. A high drain saturation current density (Ids) of 2.11 A/mm @ Vgs= 1 V and a peak extrinsic transconductance (gm) of 609 mS/mm were achieved in the InAlN/GaN HFETs. In addition, from the small-signal RF measurements, the values of fT and maximum oscillation frequency (fmax) for the device with 50-nm rectangular gate were extrapolated to be 220 GHz and 48 GHz. To our best knowledge, the value of fT is the best reported one for InAlN/GaN HFETs in China.

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YIN Jia-Yun, LV Yuan-Jie, SONG Xu-Bo, TAN Xin, ZHANG Zhi-Rong, FANG Yu-Long, FENG Zhi-Hong, CAI Shu-Jun. fT=220 GHz InAlN/GaN HFETs with regrown ohmic contacts[J]. Journal of Infrared and Millimeter Waves,2017,36(1):6~10

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History
  • Received:April 06,2016
  • Revised:September 05,2016
  • Adopted:September 29,2016
  • Online: March 28,2017
  • Published: