High responsivity of terahertz detector based on ultra-thin LiTaO3 crystal material
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State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,No. 4,Section 2,North Jianshe Road,State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,No. 4,Section 2,North Jianshe Road,aState Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,No. 4,Section 2,North Jianshe Road,State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,No. 4,Section 2,North Jianshe Road,State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,No. 4,Section 2,North Jianshe Road,State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China,No. 4,Section 2,North Jianshe Road

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    Abstract:

    Terahertz (THz) detector work at room temperature could greatly expand the application of THz science and technology. Ultra-thin(10μm)lithium tantalate crystal (LiTaO3) material was used as sensitive layer of the detector. The responsivity could reach up to 8.38×104V/W and the noise equivalent power (NEP) could be as low as 1.26×10-10W at 20Hz operating frequency by laser radiation source at 2.52 THz. Furthermore, this processing method to fabricate the ultra-thin LiTaO3 crystal material could potentially provide a feasible approach for even higher response terahertz detectors.

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LIANG Zhi-Qing, LIU Zi-Ji, JIANG Ya-Dong, ZHENG Xing, WANG-Tao, YU He. High responsivity of terahertz detector based on ultra-thin LiTaO3 crystal material[J]. Journal of Infrared and Millimeter Waves,2016,35(5):520~525

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History
  • Received:January 06,2016
  • Revised:April 08,2016
  • Adopted:April 11,2016
  • Online: October 05,2016
  • Published:
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