Broad-band mid infrared continuous-wave parametric wavelength conversion in germanium-on-silicon ridge waveguide
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School of electronic engineering, Xi’an University of Posts and Telecommunications,School of electronic engineering, Xi’an University of Posts and Telecommunications,School of electronic engineering, Xi’an University of Posts and Telecommunications,School of electronic engineering, Xi’an University of Posts and Telecommunications,School of electronic engineering, Xi’an University of Posts and Telecommunications

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    Abstract:

    A novel sub-micron optical waveguide based on silicon-on-germanium (Ge-on-Si,GOS) is proposed and by adjusting second-order dispersion curves the waveguide structure were optimized and designed .Then this article studied its wavelength conversion properties between 3μm and 6μm.The numerical results show that this waveguide can achieve high conversion efficiency in broadband infrared wavelength conversion when the pump light wavelength near the zero dispersion point at negative wavelength region of the second-order dispersion curves at the optimized waveguide structure which the ridge width is 2.8μm,ridge high is 1.6μm and slab thickness is 0.48μm.The 3dB conversion bandwidth reaches 1664nm and the maximum conversion efficiency can reach -2.479dB at the 0.05GW/cm2 power density of the pump light .This waveguide has potential applications in terms of future photonic networks and communications space due to it’s large wavelength bandwidth and high conversion efficiency advantages.

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HE Feng-Tao, SUN Li, HUI Zhan-Qang, BAI-Ke, ZHANG-Min. Broad-band mid infrared continuous-wave parametric wavelength conversion in germanium-on-silicon ridge waveguide[J]. Journal of Infrared and Millimeter Waves,2016,35(2):250~256

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History
  • Received:April 28,2015
  • Revised:December 21,2015
  • Adopted:June 05,2015
  • Online: May 11,2016
  • Published:
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