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Home > Archive>Volume 34, Issue 4, 2015 >432-436. DOI:10.11972/j.issn.1001-9014.2015.04.009
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Growth of Au-doped Hg1-xCdxTe epitaxial crystals and its Raman spectrum
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Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical

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    Abstract:

    Au-doped Hg1-xCdx Te epitaxial layers were grown by vapor phase epitaxial method. The electrical properties of Hg1-xCdxTe epitaxial layers were investigated by Hall measurement. Profile of Au in Hg1-xCdx Te epitaxial layers was revealed by Secondary ion mass spectroscopy (SIMS) method. Hall coefficient and Hall mobility of three abnormal P type samples were discussed. Moreover, variable-magnetic-field Hall measurement was performed on Hg1-xCdx Te with antitype epitaxial layer. Mobility spectrum analysis was employed to verify surface electrons, bulk electrons and bulk holes mixed conduction in Hg1-xCdx Te epitaxial layers.

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WANG Reng, JIAO Cui-Ling, XU Guo-Qing, ZHANG Li-Ping, ZHANG Ke-Feng, LU Ye, DU Yun-Chen, SHAO Xiu-Hua, LIN Xing-Chao, LI Xiang-Yang. Growth of Au-doped Hg1-xCdxTe epitaxial crystals and its Raman spectrum[J]. Journal of Infrared and Millimeter Waves,2015,34(4):432~436

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History
  • Received:June 13,2014
  • Revised:May 27,2015
  • Adopted:October 17,2014
  • Online: September 29,2015
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