Cu2ZnSnS4 films fabricated by a simple sol-gel process without sulfurization

doi:10.11972/j.issn.1001-9014.2015.02.001

Home > Archive>Volume 34, Issue 2, 2015 >129-133. DOI:10.11972/j.issn.1001-9014.2015.02.001

Cu2ZnSnS4 films fabricated by a simple sol-gel process without sulfurization
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                        10.11972/j.issn.1001-9014.2015.02.001
                    
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Affiliation:Key Laboratory of Polar Materials and Devices,Ministry of Education,East China Normal University,Key Laboratory of Polar Materials and Devices,Ministry of Education,East China Normal University,Key Laboratory of Polar Materials and Devices,Ministry of Education,East China Normal University,Key Laboratory of Polar Materials and Devices,Ministry of Education,East China Normal University,Key Laboratory of Polar Materials and Devices,Ministry of Education,East China Normal University,Key Laboratory of Polar Materials and Devices,Ministry of Education,East China Normal University
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Abstract:

Cu2ZnSnS4 (CZTS) films with a smooth and compact morphology were obtained via a sol-gel process. Raman spectra and X-ray diffraction (XRD) results indicate that all the films have the kesterite structure. Energy dispersive X-ray spectroscopy (EDS) suggests that all of CZTS films are of S-deficient, Cu-poor and Zn-rich states. The thickness of all the films is around 0.7μm measured by a field emission scanning electron microscope (FE-SEM). Transmission spectra reveal that the optical band gap (Eg) of samples reduces from 2.13 to 1.52eV as post-annealing temperature goes up.

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ZHANG Ke-Zhi, HE Jun, WANG Wei-Jun, SUN Lin, YANG Ping-Xiong, CHU Jun-Hao. Cu2ZnSnS4 films fabricated by a simple sol-gel process without sulfurization[J]. Journal of Infrared and Millimeter Waves,2015,34(2):129~133

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Received:February 10,2014
Revised:February 02,2015
Adopted:June 06,2014
Online: May 18,2015
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