Preparation and photoelectric characteristics of high speed superluminescent diode emitting at 1053 nm
CSTR:
Author:
Affiliation:

Chongqing university,College of Software, Chongqing College of Electronic Engineering,Chongqing Optoelectronics Research Institute,Chongqing Optoelectronics Research Institute,Chongqing Optoelectronics Research Institute,Chongqing Optoelectronics Research Institute,Chongqing University

Clc Number:

Fund Project:

  • Article
  • |
  • Figures
  • |
  • Metrics
  • |
  • Reference
  • |
  • Related
  • |
  • Cited by
  • |
  • Materials
  • |
  • Comments
    Abstract:

    A high speed 1053nm superluminescent diode (SLD) with ridge-waveguide structure has been fabricated. By optimizing of the growth parameters such as temperature, growth rate, epitaxial materials with excellent crystal quality were attained. The photoelectric characteristics of the SLD depended on temperature and driver current were analyzed. The coefficient of the wavelength shift with temperature was 0.35nm/℃.The wavelength of the SLD shift with driver current insensitive to the temperature. A -3dB cutoff frequency of 1.7GHz was obtained at a DC bias current of 100mA and 25℃,corresponding to 2.5mW output power from single mode fiber (SMF) with spectral modulation of less than 0.15dB and spectral width of 24nm.

    Reference
    Related
    Cited by
Get Citation

DUAN Li-Hua, ZHANG Shu-Fang, ZHOU Yong, ZHANG Jing, GUO Hong, LUO Qing-Chun, FANG Liang. Preparation and photoelectric characteristics of high speed superluminescent diode emitting at 1053 nm[J]. Journal of Infrared and Millimeter Waves,2015,34(2):218~223

Copy
Share
Article Metrics
  • Abstract:
  • PDF:
  • HTML:
  • Cited by:
History
  • Received:January 22,2014
  • Revised:February 05,2015
  • Adopted:March 28,2014
  • Online: May 18,2015
  • Published:
Article QR Code