Optimization and performance of p-GaAs homojunction THz detectors
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Department of physics and astronomy,Shanghai Jiao Tong university,Department of physics and astronomy,Shanghai Jiao Tong university,Department of physics and astronomy,Shanghai Jiao Tong university,Department of physics and astronomy,Shanghai Jiao Tong university

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    Abstract:

    In order to improve the quantum efficiency of THz detectors made of p-GaAs homojunction, the effects of temperature and bias voltage were taken into account. By optimizing the materials and structure parameters of the resonant cavity enhanced p-GaAs HIWIP detectors, its quantum efficiency was increased to 17%. The relationships among the responsivity and detectivity of the detector, bias voltage, temperature and spectral frequency were simulated, leading to an optimized bias voltage range(10~40mV), an optimal temperature(< 8K) and a maximum detectivity(4.1×1010cm Hz1/2/W). By applying a pair of matched mirror, the ultimate quantum efficiency, the detectivity and the responsivity are 26%, 5.7×1010cm Hz1/2/W and 25.9 A/W, respectively.

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QIAN Fei, WANG Tian-Meng, ZHANG Yue-Heng, SHEN Wen-Zhong. Optimization and performance of p-GaAs homojunction THz detectors[J]. Journal of Infrared and Millimeter Waves,2015,34(1):29~35

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History
  • Received:October 16,2013
  • Revised:November 14,2013
  • Adopted:November 15,2013
  • Online: April 03,2015
  • Published: