A two-dimension numerical analysis for the electrical characteristics of Si/strained Si1-xGex/Si hetero-junction-on-insulator p-MOSFET has been complished. The characteristics of the threshold voltage, transfer and output were studied. The results indicate that the value of the threshold voltage has a positive offset and the transfer characteristics are improved with increase of Ge content. The growth rate of the drain-source current becomes lower with the increase of Ge content under a fixed bias voltage on the device, compained by obvious kink in the output characteristics.