Institute for Optoelectronic Information Materials, Yunnan University,Institute for Optoelectronic Information Materials,Yunnan University,School of Electron Science and Engineering, State Key Laboratory of Solid State Microstructures, Nanjing University,Shanghai Institute of Technical Physics, Chinese Academy of Science,Institute for Optoelectronic Information Materials,Yunnan University
A two-dimension numerical analysis for the electrical characteristics of Si/strained Si1-xGex/Si hetero-junction-on-insulator p-MOSFET has been complished. The characteristics of the threshold voltage, transfer and output were studied. The results indicate that the value of the threshold voltage has a positive offset and the transfer characteristics are improved with increase of Ge content. The growth rate of the drain-source current becomes lower with the increase of Ge content under a fixed bias voltage on the device, compained by obvious kink in the output characteristics.
YANG Zhou, WANG Chong, YU Jie, HU Wei-Da, YANG Yu. Two-dimensional numerical analysis for the electrical characteristics of Si/Strained Si1-xGex/Si hetero-junction-on-insulator p-MOSFET[J]. Journal of Infrared and Millimeter Waves,2015,34(2):172~176Copy