Thermal cycling reliability of linear HgCdTe infrared detectors

Shanghai Institute of Technical Physics

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    For typeⅠand typeⅡ linear HgCdTe detector modules, the size of detector chip, Si-ROIC and sapphire electrical lead board in typeⅠmodule are exactly same as those in type Ⅱ module, while the hybrid architecture is different. The thermal stress distribution and warpage of these two modules at cryogenic temperature were analyzed by using finite element method(FEM). The FEM results are in good agreement with experimental phenomenon, and measurements of modules’ warpage at cryogenic temperature verify the rationality of simulated results.

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CHEN Xing, HE Kai, WANG Jian-Xin, YE Zhen-Hua, LIN Chun, ZHANG Qin-Yao. Thermal cycling reliability of linear HgCdTe infrared detectors[J]. Journal of Infrared and Millimeter Waves,2014,33(4):369~374

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  • Received:March 19,2013
  • Revised:June 02,2014
  • Adopted:April 19,2013
  • Online: September 02,2014
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