Voltage dependent quantum efficiency measurement in property study of thin film solar cells
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Key Laboratory of Polar Materials and Devices,Ministry of Education,East China Normal University,Shanghai Center for Photovoltaics,Shanghai Center for Photovoltaics,Shanghai Center for Photovoltaics,National Laboratory for Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai Center for Photovoltaics,Shanghai Center for Photovoltaics,Shanghai Center for Photovoltaics,Key Laboratory of Polar Materials and Devices,Ministry of Education,East China Normal University,Key Laboratory of Polar Materials and Devices,Ministry of Education,East China Normal University,Key Laboratory of Polar Materials and Devices,Ministry of Education,East China Normal University

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    Abstract:

    Quantum efficiency measured at different voltage varies in a wide range. Compensation of the window layer, quality of the main junction and the value of back contact barrier can be derived from the voltage dependent quantum efficiency at different wavelength region. Depletion width and diffusion length of the minority carrier can be calculated from the apparent quantum efficiency. Relationship of the depletion width, diffusion length of the minority carrier and apparent quantum efficiency is presented in the article. A new method to calculate the depletion width and diffusion length of the minority carrier is proposed. Furthermore, we discussed the feasibility of studying thin film solar cells via its voltage dependent quantum efficiency.

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HUANG Zhi-Peng, ZHAO Shou-Ren, SUN Lei, SUN Peng-Chao, ZHANG Chuan-Jun, WU Yun-Hua, CAO Hong, WANG Shan-Li, HU Zhi-Gao, YANG Ping-Xiong, CHU Jun-Hao. Voltage dependent quantum efficiency measurement in property study of thin film solar cells[J]. Journal of Infrared and Millimeter Waves,2014,33(4):395~399

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History
  • Received:February 26,2013
  • Revised:May 16,2014
  • Adopted:April 22,2013
  • Online: September 02,2014
  • Published:
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