YANG Wei
Institute of Semiconductors,Chinese Academy of SciencesLIANG Ji-Ran
School of electronic and Information Engineering, Tianjin UniversityJI Yang
Institute of Semiconductors,Chinese Academy of SciencesLIU Jian
Institute of Semiconductors,Chinese Academy of SciencesInstitute of Semiconductors,Chinese Academy of Sciences,School of electronic and Information Engineering, Tianjin University,Institute of Semiconductors,Chinese Academy of Sciences,Institute of Semiconductors,Chinese Academy of Sciences
Vanadium oxide thin film was deposited on sapphire by RF magnetron sputtering. The XRD measurement result shows that the thin film is mainly composed of polycrystalline vanadium dioxide. The resistance of the thin film and its optical reflectivity at five different wavelengths were measured simultaneously during the semiconductor-metal phase transition. While both resistance and reflectivity measurements show reproducible hysteresis loops, they have quite different appearance. The optical phase transitions of VO2 at different points are almost the same, thus proving that the sample is uniform.
YANG Wei, LIANG Ji-Ran, JI Yang, LIU Jian. Electrical and optical properties of vanadium dioxide thin film at phase transition[J]. Journal of Infrared and Millimeter Waves,2014,33(4):426~429
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