1.54 μm electroluminescence from ErQ doped ADN organic light-emitting diodes
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Peking University,Peking University,Peking University,Peking University

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    Abstract:

    A near-infrared (NIR) organic light-emitting devices (OLEDs) was demonstrated with emissive layers (EMLs) based on erbium (111) tris(8-hydroxyquinoline) (ErQ) and the blue host material of 9,10-di-beta-naphthylanthraeene (ADN). The fundamental structure of the devices is (p-Si /NPB /EML /Bphen /Bphen:Cs2CO3 /Sm /Au), where three sets of EMLs (ErQ/ADN bilayer, (ErQ /ADN)×3 multilayer, and ErQ: ADN doped layer) have been compared. In all the three structures, 1.54 μm electroluminescence was observed due to the 4I13/2~4I15/2 transitions of Er3 . Compared with the ADN/ErQ bilayer structure, the NIR electroluminescence (EL) intensity is stronger by three times in the ADN: ErQ(1∶1) doped structure. The ADN: ErQ composite films with different doping levels were further characterized by the measurements of absorption, photoluminescence and photoluminescence decay time. The results indicate effective energy transfer from ADN host to emissive molecular ErQ in the NIR EL process.

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QU Hai-Jing, TAO Li, WANG Wei, RAN Guang-Zhao.1.54 μm electroluminescence from ErQ doped ADN organic light-emitting diodes[J]. Journal of Infrared and Millimeter Waves,2014,33(1):31~35

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History
  • Received:October 14,2012
  • Revised:November 29,2012
  • Adopted:December 05,2012
  • Online: April 03,2014
  • Published: