Bromine etching and bromine polishing are two different surface treatment reported. Mobility spectrum and mobility-temperature character are used to compare the influence between bromine etching and polishing. After that, the material treated with two different methods is fabricated into detector. Resistivity as a function of temperature is measured. All the experiments indicated that there is more surface electron and ionized impurity scattering counted more in the material treated by bromine etching, however, for the material polished by bromine, the surface electron concentration is much less and lattice scattering plays a major role, in result the performance of the final detector is much better.Etching and polishing with bromine are two different surface treatments for HgCdTe material. To evaluate the effectiveness of the surface treatment, both the mobility dependence of carrier concentration and temperature dependence of the mobility were investigated. Then, the material treated with the two different methods was fabricated into detectors. Resistivity as a function of temperature was measured. The experiments indicated that there are more surface electrons and ionized impurity scattering in the material treated by bromine etching than that treated by polishing, wherein lattice scattering plays a major role. Thus the performance of the final detector made of material treated by polishing is much better.