Long wavelength infrared detector based on Type-II InAs/GaSb superlattice

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Long wavelength infrared detector based on Type-II InAs/GaSb superlattice
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Affiliation:Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai, Graduate School of the Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai, Graduate School of the Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai, Graduate School of the Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai, Graduate School of the Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai, Graduate School of the Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai, Graduate School of the Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai, Graduate School of the Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai, Graduate School of the Chinese Academy of Sciences
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Abstract:

A 12.5 μm long wavelength infrared detector based on InAs/GaSb Type-II superlattice was presented in this work. Superlattice materials were grown on GaSb substrates using MBE technology. Absorber structure for long wavelength detector was designed to be 15ML(InAs)/7ML(GaSb). The detector used a PBIN multiple heterostructures to decrease the dark current. The dark current I-V curve, responsivity spectra and blackbody current responsivity were measured at 77 K. At this temperature, RmaxA product was 2.5 Ωcm2 for the device with a photo sensitive area of 100 μm× 100μm. At zero bias, a current responsivity of 1.29 A/W was measured for the detector, which correspond to a blackbody detectivity of 2.1×109 cmHz1/2/W. Quantum efficiency at 11 μm was measured to be 14.3%. Dark current characteristics were simulated with four kinds of probable transport mechanisms. The results showed that the dominated dark current of the detector is Generation-Recombination current.

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ZHOU Yi, CHEN Jian-Xin, XU Qing-Qing, XU Zhi-Cheng, JIN Chuan, XU Jia-Jia, JIN Ju-Peng, HE Li. Long wavelength infrared detector based on Type-II InAs/GaSb superlattice[J]. Journal of Infrared and Millimeter Waves,2013,32(3):210~214

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Received:March 07,2012
Revised:March 30,2012
Adopted:March 31,2012
Online: June 14,2013
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