Photoluminescence and electrical characteristics of arsenic-doped HgCdTe

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Photoluminescence and electrical characteristics of arsenic-doped HgCdTe
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Affiliation:National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,,Research Center for Advanced Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,Research Center for Advanced Materials and Devices, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China,National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics,ECNU-SITP Joint Laboratory for Image Information, East China Normal University,Shanghai
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Abstract:

Electrical and optical properties of HgCdTe are crucial for detectors. Infrared photoluminescence (PL) spectra in the temperature range of 11-300K and Hall data were recorded on the arsenic-doped narrow-gap HgCdTe epilayers. Curve fittings of PL spectra indicate that AsTe、 VHg、 TeHg-VHg and TeHg exist in the arsenic-doped HgCdTe epilayers after the two-step annealing. More TeHg-VHg pairs are created when the dopant concentration is increased. Analysis of temperature-dependent Hall data verifies the existence of TeHg, which lowers the mobility of the material.

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ZHANG Xiao-Hua, CHEN Lu, LIN Tie, HE Li, GUO Shao-Ling, CHU Jun-Hao. Photoluminescence and electrical characteristics of arsenic-doped HgCdTe[J]. Journal of Infrared and Millimeter Waves,2012,31(5):407~410

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Received:October 21,2011
Revised:December 09,2011
Adopted:December 12,2011
Online: October 31,2012
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