Peak detection wavelength at 8 μm: accurate design and fabrication of quantum well infrared photodetector
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Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors, Shanghai Institute of Technical Physics, Chinese Academy of Sciences,Key Laboratory of Infrared Imaging Materials and Detectors,Shanghai Institute of Technical Physics, Chinese Academy of Sciences

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    Abstract:

    Using one band effective mass approximation and shooting method, optimized parameters of quantum well infrared photodetector structure were calculated. Taking into account high order effect of band nonparabolicity, the device structure with a peak detection wavelength of 8 μm were designed. Based on the calculated result, GaAs/AlGaAs multiwell material was grown. Then single-element QWIP device were fabricated and characterized. Symmetrical I-V curves showed very good quality of the material and successful process in device fabrication. Spectral responsivity exhibited peak wavelength of 7.96 and 7.98 μm, which were in excellent agreement with our designed value.

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JIN Ju-Peng, LIU Dan, CHEN Jian-Xin, LIN Chun. Peak detection wavelength at 8 μm: accurate design and fabrication of quantum well infrared photodetector[J]. Journal of Infrared and Millimeter Waves,2012,31(6):481~485

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History
  • Received:June 17,2011
  • Revised:March 01,2012
  • Adopted:July 19,2012
  • Online: November 21,2012
  • Published: