Defect of Te-doped GaSb layers grown by molecular beam epitaxy

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Defect of Te-doped GaSb layers grown by molecular beam epitaxy
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Affiliation:Department of Physics , Mianyang Normal University,Department of Physics,College of Physical Science and Technolog,Sichuan University,State Key lab for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,State Key lab for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,State Key lab for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences,State Key lab for Superlattices and Microstructures,Institute of Semiconductors,Chinese Academy of Sciences
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Abstract:

In this paper we present the results of positron annihilation doppler broadening spectroscopy (PADB), X-ray diffraction spectra (XRD), and atomic force microscopy (AFM) measurements on the undoped GaSb and Te-doped GaSb films grown on GaAs substrate by molecular beam epitaxy(MBE). Research shows that the S parameter is smaller in GaSb film than the bulk material. The defects in the Te-doped N-type semiconductor GaSb obtained by MBE are mainly vacancies and impurity atoms instead of complex defects 。

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CHEN Yan, DENG Ai-Hong, TANG Bao, WANG Guo-Wei, XU Ying-Qiang, NIU Zhi-Chuan. Defect of Te-doped GaSb layers grown by molecular beam epitaxy[J]. Journal of Infrared and Millimeter Waves,2012,31(4):298~301

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Received:June 06,2011
Revised:February 29,2012
Adopted:July 10,2011
Online: August 27,2012
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