A 75 GHz 13.92 dBm InP DHBT cascode power amplifier
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Institute of Microelectronics of Chinese Academy of Sciences,Institute of Microelectronics of Chinese Academy of Sciences,Institute of Microelectronics of Chinese Academy of Sciences,Institute of Microelectronics of Chinese Academy of Sciences,Institute of Microelectronics of Chinese Academy of Sciences,Institute of Microelectronics of Chinese Academy of Sciences

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    Abstract:

    A 75 GHz monolithic-microwave integrated-circuit (MMIC) four- fingers cascode power amplifier in InP double heterojunction bipolar transistors (DHBT) technology with an fmax about 150 GHz was reported. The amplifier has 15μm x 4μm total emitter area and exhibits a power gain of 12.3 dB at 75 GHz with 13.92 dBm output saturated power. The amplifier achieves a peak output power of 14.53 dBm with 2 dBm input power at 72.5 GHz. The MMIC adopts coplanar waveguide (CPW) structure as the transmission line structure with area of 1.06 mm x 0.75 mm .

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CAO Yu-Xiong, SU Yong-Bo, WU Dang-Yu, JIN Zhi, WANG Xian-Tai, LIU Xin-Yu. A 75 GHz 13.92 dBm InP DHBT cascode power amplifier[J]. Journal of Infrared and Millimeter Waves,2012,31(4):294~297

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History
  • Received:May 13,2011
  • Revised:December 14,2011
  • Adopted:August 29,2011
  • Online: August 27,2012
  • Published: