Trapped carrier relaxation in deep level states in GaInNAs: studied with picosecond pumpprobe measurements
DOI:
CSTR:
Author:
Affiliation:

Clc Number:

Fund Project:

  • Article
  • |
  • Figures
  • |
  • Metrics
  • |
  • Reference
  • |
  • Related
  • |
  • Cited by
  • |
  • Materials
  • |
  • Comments
    Abstract:

    A pumpprobe study of carrier dynamics in GaInNAs was carried out. Induced absorption by trapped electrons in deep level states becomes important as inferred from the sign of the transmittance change. A simplified differential equation model has been utilized to simulate photogenerated carrier dynamics in GaInNAs and to fit differential transmission results. The model can interpret the temporal evolution of the trapped carrier density and extract the time constants of the carrier relaxation processes.

    Reference
    Related
    Cited by
Get Citation

MA Fa-Jun, LI Zhi-Feng, CHEN Ping-Ping, LU Wei. Trapped carrier relaxation in deep level states in GaInNAs: studied with picosecond pumpprobe measurements[J]. Journal of Infrared and Millimeter Waves,2011,30(3):268~272

Copy
Share
Article Metrics
  • Abstract:
  • PDF:
  • HTML:
  • Cited by:
History
  • Received:September 01,2010
  • Revised:October 12,2010
  • Adopted:October 16,2010
  • Online: June 14,2011
  • Published:
Article QR Code