1.中国科学院半导体研究所 半导体超晶格国家重点实验室，北京 100083;2.中国科学院大学 材料科学与光电技术学院，北京 100049;3.北京量子信息科学研究院，北京 100193;4.山西大学 物理与电子工程学院 固体量子材料中心实验室，山西 太原 030006
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1.State Key Laboratory for Superlattices and Microstructures， Institute of Semiconductors， Chinese Academy of Sciences， Beijing 100083， China;2.Center of Materials Science and Optoelectronics Engineering，University of Chinese Academy of Sciences， Beijing 100049， China;3.Beijing Academy of Quantum Information Sciences， Beijing 100193， China;4.Laboratory of Solid Quantum Material Center， College of Physics and Electronic Engineering， Shanxi University， Taiyuan 030006， China
Supported by the National Natural Science Foundation of China (61790580, 61790581, 61790582, 61435012), the National Key Technologies R&D Program of China (2018YFA0306101), the Key R&D Program of Guangdong Province (2018B030329001), and the Scientific Instrument Developing Project of the Chinese Academy of Sciences (YJKYYQ20170032).
袁野,苏向斌,杨成奥,张一,尚金铭,谢圣文,张宇,倪海桥,徐应强,牛智川.（英）利用分子束外延在GaAs基上生长高特征温度的InAs量子点激光器[J].红外与毫米波学报,2020,39(6):667~670]. YUAN Ye, SU Xiang-Bin, YANG Cheng-ao, ZHANG Yi, SHANG Jin-Ming, XIE Sheng-Wen, ZHANG Yu, NI Hai-Qiao, XU Ying-Qiang, NIU Zhi-Chuan. Molecular beam epitaxial growth of InAs quantum dots on GaAs for high characteristics temperature lasers[J]. J. Infrared Millim. Waves,2020,39(6):667~670.]
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