(英)利用分子束外延在GaAs基上生长高特征温度的InAs量子点激光器
作者:
作者单位:

1.中国科学院半导体研究所 半导体超晶格国家重点实验室,北京 100083;2.中国科学院大学 材料科学与光电技术学院,北京 100049;3.北京量子信息科学研究院,北京 100193;4.山西大学 物理与电子工程学院 固体量子材料中心实验室,山西 太原 030006

中图分类号:

O43


Molecular beam epitaxial growth of InAs quantum dots on GaAs for high characteristics temperature lasers
Author:
  • YUAN Ye 1,2

    YUAN Ye

    State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences, Beijing 100049, China
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  • SU Xiang-Bin 1,2

    SU Xiang-Bin

    State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences, Beijing 100049, China
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  • YANG Cheng-ao 1,2

    YANG Cheng-ao

    State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences, Beijing 100049, China
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  • ZHANG Yi 1,2

    ZHANG Yi

    State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences, Beijing 100049, China
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  • SHANG Jin-Ming 1,2

    SHANG Jin-Ming

    State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences, Beijing 100049, China
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  • XIE Sheng-Wen 1,2

    XIE Sheng-Wen

    State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences, Beijing 100049, China
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  • ZHANG Yu 1,2

    ZHANG Yu

    State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences, Beijing 100049, China
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  • NI Hai-Qiao 1,2

    NI Hai-Qiao

    State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences, Beijing 100049, China
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  • XU Ying-Qiang 1,2

    XU Ying-Qiang

    State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences, Beijing 100049, China
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  • NIU Zhi-Chuan 1,2,3,4

    NIU Zhi-Chuan

    State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences, Beijing 100049, China;Beijing Academy of Quantum Information Sciences, Beijing 100193, China;Laboratory of Solid Quantum Material Center, College of Physics and Electronic Engineering, Shanxi University, Taiyuan 030006, China
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Affiliation:

1.State Key Laboratory for Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China;2.Center of Materials Science and Optoelectronics Engineering,University of Chinese Academy of Sciences, Beijing 100049, China;3.Beijing Academy of Quantum Information Sciences, Beijing 100193, China;4.Laboratory of Solid Quantum Material Center, College of Physics and Electronic Engineering, Shanxi University, Taiyuan 030006, China

Fund Project:

Supported by the National Natural Science Foundation of China (61790580, 61790581, 61790582, 61435012), the National Key Technologies R&D Program of China (2018YFA0306101), the Key R&D Program of Guangdong Province (2018B030329001), and the Scientific Instrument Developing Project of the Chinese Academy of Sciences (YJKYYQ20170032).

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    摘要:

    通过MBE外延系统生长了1.3 μm的GaAs基InAs量子点激光器.为了获得更好的器件性能,InAs量子点的最优生长温度被标定为520 ℃,并且在有源区中引入Be掺杂.制备了脊宽100 μm,腔长2 mm的激光器单管器件,在未镀膜的情况下,达到了峰值功率1.008 W的室温连续工作,阈值电流密度为110 A/cm-2,在80℃下仍然可以实现连续工作,在50 ℃以下范围内,特征温度达到405 K.

    Abstract:

    GaAs-based 1.3 μm InAs quantum dot laser have been grown by MBE system. Under the optimized InAs quantum dots growth temperature of 520℃, and the methods of Be-doping in the active region are adopted for better device performance. With a ridge width of 100 μm and cavity length of 2 mm, the maximum output power of single facet without coating has reached up to 1008 mW under continuous wave (CW) operation at room temperature, and the threshold current density is 110 A/cm2. The QD lasers can still operate at continuous waves (CW) up to 80℃, and the characteristic temperature below 50℃ is as high as 405 K.

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袁野,苏向斌,杨成奥,张一,尚金铭,谢圣文,张宇,倪海桥,徐应强,牛智川.(英)利用分子束外延在GaAs基上生长高特征温度的InAs量子点激光器[J].红外与毫米波学报,2020,39(6):667~670]. YUAN Ye, SU Xiang-Bin, YANG Cheng-ao, ZHANG Yi, SHANG Jin-Ming, XIE Sheng-Wen, ZHANG Yu, NI Hai-Qiao, XU Ying-Qiang, NIU Zhi-Chuan. Molecular beam epitaxial growth of InAs quantum dots on GaAs for high characteristics temperature lasers[J]. J. Infrared Millim. Waves,2020,39(6):667~670.]

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历史
  • 收稿日期:2020-02-15
  • 最后修改日期:2020-11-11
  • 录用日期:2020-03-31
  • 在线发布日期: 2020-11-10
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