铜锌锡硫带边电子结构及缺陷态的光学表征
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1.华东师范大学 物理与电子科学学院 极化材料与器件教育部重点实验室,上海 200241;2.中国科学院上海技术物理研究所 红外物理国家重点实验室上海 200083

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O474

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国家自然科学基金(61790583, 61874043, 61874045, 61574057;


Optical characterization of bandedge electronic structure and defect states in Cu2ZnSnS4
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Affiliation:

1.Key Laboratory of Polar Materials and Devices, School of Physics and Electronic Science, East China Normal University, Shanghai 200241, China;2.National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

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    摘要:

    利用吸收、光电流和光致发光等光谱表征并结合理论报道,分析了缺陷态丰富的铜锌锡硫半导体材料的光学带隙、带尾态和深浅杂质能级,揭示了相关的缺陷态是影响铜锌锡硫带边电子结构的关键因素,其中高浓度的中性缺陷簇[]能导致带隙明显窄化,而离子性缺陷簇[]是主要的深施主缺陷态,同时存在的大量带尾态引起带边相关的光致发光峰明显红移。贫铜富锌条件下,适当减少锡含量,可有效抑制与相关的缺陷簇,并避免带隙的窄化。

    Abstract:

    The bandedge electronic structure including the optical bandgap, band-tail states, and deep/shallow donor and acceptor levels in Cu2ZnSnS4 semiconductor was analyzed by absorption, photocurrent and photoluminescence spectroscopy, and the theoretical reports. It is revealed that the -related defect in Cu2ZnSnS4 with abundant defect states is one of the key factors affecting the band-edge electronic structure. High concentration of the neutral defect cluster [] can narrow the band gap substantially, while the partially-passivated (ionic) defect cluster [] is the main deep donor defect. A large number of band-tail states are responsible for the obvious red-shift of the bandedge-related photoluminescence transition energy. These detrimental defects related to can be effectively suppressed by properly reducing the Sn content in the copper-poor and zinc-rich growth condition, which also avoids the narrowing of the optical bandgap of the Cu2ZnSnS4 absorption layer.

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马骕驭,马传贺,卢小双,李国帅,孙琳,陈晔,越方禹,褚君浩.铜锌锡硫带边电子结构及缺陷态的光学表征[J].红外与毫米波学报,2020,39(1):92~98]. MA Su-Yu, MA Chuan-He, LU Xiao-Shuang, LI Guo-Shuai, SUN Lin, CHEN Ye, YUE Fang-Yu, CHU Jun-Hao. Optical characterization of bandedge electronic structure and defect states in Cu2ZnSnS4[J]. J. Infrared Millim. Waves,2020,39(1):92~98.]

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  • 收稿日期:2019-09-16
  • 最后修改日期:2020-01-06
  • 录用日期:2019-09-30
  • 在线发布日期: 2020-01-07
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