InAs/GaAsSb带间级联中波红外焦平面研究 |
投稿时间:2019-04-15 修订日期:2019-11-19 点此下载全文 |
引用本文:周易,柴旭良,田源,徐志成,黄敏,许佳佳,黄爱波,白治中,陈红雷,丁瑞军,陈建新,何力.InAs/GaAsSb带间级联中波红外焦平面研究[J].红外与毫米波学报,2019,38(6):745~750].ZHOU Yi,CHAI Xu-Liang,TIAN Yuan,XU Zhi-Cheng,HUANG Min,XU Jia-Jia,HUANG Ai-Bo,BAI Zhi-Zhong,CHEN Hong-Lei,DING Rui-Jun,CHEN Jian-Xin,HE Li.Studies on InAs/GaAsSb mid-wavelength interband cascade infrared focal plane arrays[J].J.Infrared Millim.Waves,2019,38(6):745~750.] |
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基金项目:国家重点研发计划 2016YFB0402403;国家自然科学基金 61974152 61904183 61534006 61505237 61505235;中国科学院青年创新促进会会员资助 2016219国家重点研发计划(2016YFB0402403),国家自然科学基金(61974152, 61904183, 61534006, 61505237, 61505235),中国科学院青年创新促进会会员资助(2016219) |
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中文摘要:针对高工作温度红外探测器的迫切需求,设计并利用分子束外延技术制备了高晶格质量的2级带间级联中波红外探测材料,带间级联单元器件在最高323 K下可以测试到清晰的响应光谱,140 K下暗电流密度达到4×10-5 A/cm-2.并在此基础上利用干法刻蚀技术实现了320×256规模的台面型带间级联红外焦平面原型器件.焦平面测试结果表明其在80~120 K范围内量子效率达到30%,127 K下噪声等效温差为55.1 mK,盲元率为2.3%.采用该焦平面器件在127 K下获得了较为清晰的演示性室温目标红外热成像. |
中文关键词:光电探测器 红外焦平面 带间级联结构 高工作温度 |
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Studies on InAs/GaAsSb mid-wavelength interband cascade infrared focal plane arrays |
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Abstract:Mid-wavelength infrared interband cascade photodetectors (ICIP) for high operation temperature applications were designed and grown in molecular beam epitaxy (MBE) system. Clear optical response was measured even at a temperature of 323 K, and the dark current density was 4×10-5 A/cm-2 at 140 K for single element device. Based on great material quality of the two-stage ICIP, 320×256 focal plane arrays (FPA) were demonstrated using dry etching. The FPA has a quantum efficiency of 30% from 80 K to 120 K. At 127 K, the device has a noise equivalent temperature difference (NETD) of 55.1 mK and dead pixel rate of 2.3%. Clear infrared images have been taken for a room temperature target with the focal plane arrays at 127 K. |
keywords:photoelectric detector infrared focal plane arrays interband cascade structure high operation temperature |
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