Mid-wavelength infrared interband cascade photodetectors （ICIP） for high operation temperature applications were designed and grown in molecular beam epitaxy （MBE） system. Clear optical response was measured even at a temperature of 323 K, and the dark current density was 4×10^-5 A/cm^-2 at 140 K for single element device. Based on great material quality of the two-stage ICIP, 320×256 focal plane arrays （FPA） were demonstrated using dry etching. The FPA has a quantum efficiency of 30% from 80 K to 120 K. At 127 K, the device has a noise equivalent temperature difference （NETD） of 55.1 mK and dead pixel rate of 2.3%. Clear infrared images have been taken for a room temperature target with the focal plane arrays at 127 K.