利用大周期光子晶体结构增强InAs/GaAs量子点的激发态发光
投稿时间:2019-03-19  修订日期:2019-07-07  点此下载全文
引用本文:秦璐,徐波,许兴胜.利用大周期光子晶体结构增强InAs/GaAs量子点的激发态发光[J].红外与毫米波学报,2019,38(5):559~565].QIN Lu,XU Bo,XU Xing-Sheng.Enhancement of excited-state emission of InAs/GaAs quantum dots with large-period photonic crystal[J].J.Infrared Millim.Waves,2019,38(5):559~565.]
摘要点击次数: 7
全文下载次数: 0
作者单位E-mail
秦璐 中国科学院半导体研究所 集成光电子学国家重点实验室北京 100083
中国科学院大学 材料光电研究中心,北京 1001408 
qinlu@semi.ac.cn 
徐波 中国科学院大学 材料光电研究中心,北京 1001408
中国科学院半导体研究所 材料重点实验室,北京 100083 
 
许兴胜 中国科学院半导体研究所 集成光电子学国家重点实验室北京 100083
中国科学院大学 材料光电研究中心,北京 1001408 
xsxu@semi.ac.cn 
中文摘要:在该研究中,通过激光全息和湿法腐蚀的方法在InAs/GaAs量子点材料上制备光子晶体,研究了由激光二极管激发制备了光子晶体的InAs / GaAs量子点材料的光致发光光谱.发现具有光子晶体的量子点材料的光谱显示出多峰结构,光子晶体对短波长部分的发光增强和调制比对长波长部分的增强和调制更明显.InAs / GaAs量子点的光致发光光谱通过刻蚀形成的光子晶体结构得到了调控,并且量子点的激发态发光得到了明显增强.
中文关键词:量子点  光子晶体  激光全息曝光  光致发光光谱
 
Enhancement of excited-state emission of InAs/GaAs quantum dots with large-period photonic crystal
Abstract:In this study, the photoluminescence spectra of InAs/GaAs quantum dots material with photonic crystals were investigated by laser diode excitation. The photonic crystals were fabricated in the material of InAs/GaAs quantum dots by laser holography and wet etching method. It was found that the spectra from quantum dots with photonic crystals appeared multi-peak structure; the enhancement and modification to the short-wavelength component were more pronounced than those to the long-wavelength components. The photoluminescence from InAs/GaAs quantum dots was modified by photonic crystals, and the emission from excited states was significantly enhanced.
keywords:quantum dots  photonic crystal  laser holography  photoluminescence spectra
查看全文  HTML  查看/发表评论  下载PDF阅读器

版权所有:《红外与毫米波学报》编辑部