InAs基InAs/Ga(As)Sb II类超晶格长波红外探测器湿法腐蚀研究
投稿时间:2019-01-12  修订日期:2019-07-08  点此下载全文
引用本文:吴佳,徐志成,陈建新,何力.InAs基InAs/Ga(As)Sb II类超晶格长波红外探测器湿法腐蚀研究[J].红外与毫米波学报,2019,38(5):549~553].WU Jia,XU Zhi-Cheng,CHEN Jian-Xin,HE Li.Wet etching for InAs-based InAs/Ga(As)Sb superlattice long wavelength infrared detectors[J].J.Infrared Millim.Waves,2019,38(5):549~553.]
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作者单位E-mail
吴佳 中国科学院上海技术物理研究所 红外成像材料与器件重点实验室上海 200083
中国科学院大学北京 100049 
wujia_0128@163.com 
徐志成 中国科学院上海技术物理研究所 红外成像材料与器件重点实验室上海 200083  
陈建新 中国科学院上海技术物理研究所 红外成像材料与器件重点实验室上海 200083 jianxinchen@mail.sitp.ac.cn 
何力 中国科学院上海技术物理研究所 红外成像材料与器件重点实验室上海 200083  
中文摘要:开展了InAs基InAs/Ga(As)Sb II类超晶格长波红外探测器的湿法腐蚀工艺研究.选择的腐蚀液由柠檬酸、磷酸和过氧化氢组成,先后在InAs、GaSb体材料和InAs/Ga(As)Sb II类超晶格上进行了湿法腐蚀实验,分别获得了其最佳的腐蚀液组分及配比.使用优化的磷酸系腐蚀液对InAs/Ga(As)Sb II类超晶格进行腐蚀,获得的腐蚀表面粗糙度仅为1 nm.然后使用改进的工艺制备了50 %截止波长为12 μm的超晶格长波单元器件,实验结果表明磷酸系腐蚀液可以获得低暗电流密度的InAs基InAs/Ga(As)Sb II类超晶格长波红外探测器.另外,在81 K下,该探测器的表面电阻率(ρSurface)为4.4 × 103 Ωcm.
中文关键词:InAs/Ga(As)Sb  II类超晶格  湿法腐蚀  表面形貌
 
Wet etching for InAs-based InAs/Ga(As)Sb superlattice long wavelength infrared detectors
Abstract:Wet chemical etching of InAs-based InAs/Ga(As)Sb superlattice long wavelength infrared photodiodes was studied in this paper. The etching experiments using citric acid, orthophosphoric acid and hydrogen peroxide were carried out on InAs, GaSb bulk materials and InAs/Ga(As)Sb superlattices with different solution ratios. An optimized etching solution for the InAs-based superlattices has been obtained. The etched surface roughness is only 1 nm. InAs-based superlattice LWIR detectors with 50 % cut-off wavelength of 12 μm were fabricated. The photodetectors etched with optimized solution ratio show low surface leakage characteristic. At 81 K temperature, the surface resistivity ρSurface of the detector is 4.4 × 103 Ωcm.
keywords:InAs/Ga(As)Sb  type-II superlattice  wet chemical etching  surface morphology
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