基于异质结倍增层的InAlAsSb SACM雪崩光电二极管的优化
投稿时间:2019-01-12  修订日期:2019-07-13  点此下载全文
引用本文:蒋毅,陈俊.基于异质结倍增层的InAlAsSb SACM雪崩光电二极管的优化[J].红外与毫米波学报,2019,38(5):598~603].JIANG Yi,CHEN Jun.Optimization of InAlAsSb SACM APD with a heterojunction multiplication layer[J].J.Infrared Millim.Waves,2019,38(5):598~603.]
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作者单位邮编
蒋毅 苏州大学 电子信息学院 215006
陈俊 苏州大学 电子信息学院 215006
基金项目:国家自然科学基金 61774108国家自然科学基金(61774108)
中文摘要:使用低工作电压的雪崩光电二极管(APD)有利于提高集成电路的稳定性和降低功耗.文章建立了一个分离吸收、电荷、倍增(SACM)型的雪崩光电二极管的模型,为了在低偏压下获得高增益同时不降低工作电压范围,这个模型采用了具有高低禁带宽度的异质结倍增层.同时,文章研究了异质结倍增层的厚度和掺杂浓度对暗电流和增益的影响.通过对掺杂浓度的优化,击穿电压和穿通电压可以同时下降.
中文关键词:InAlAsSb  雪崩光电二极管  异质结倍增层  击穿电压  穿通电压
 
Optimization of InAlAsSb SACM APD with a heterojunction multiplication layer
Abstract:For avalanche photodiodes (APDs), low operation voltage is required for integrated circuit stability and low power consumption. In this paper, a model for InAlAsSb separate absorption, charge, and multiplication (SACM) APD is established. To get higher gain at lower reversed bias voltage without sacrificing the operating voltage range, a high/low band gap multiplication layer is adopted. The effects of the thickness and doping concentration of the multiplication layer on the dark-current and the break-down voltage have been investigated. By optimization of the doping concentration, the break-down voltage and punch-through voltage can be decreased simultaneously.
keywords:InAlAsSb  avalanche photodiode  hetero-junction multiplication layer  break-down voltage  punch-through voltage
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