The transmittance, absorption edge and interference behaviors were calculated theoretically for the Hg1-xCdxTe/CdTe/GaAs materials grown by MOCVD. The calculation results show that the transmittance of Hg1-xCdxTe film can not reveal the material quajity as that of bulk material. The relationship between the interference wave and Hg1-xCdxTe film thickness is discussed. It also can be found from the calculation of the absorption edge that the composition uniformity of the film has great influence on the absorption edge of the infrared spectra. By analyzing the spectrum properties measured in the experiments, a kind of partial saturated growth mechanism is discovered for MOCVD. Besides, it is found that the HgTe film has also a certain transmission to infrared radiation.