GaAs/Al_xGa_(1-x)As多量子阱红外探测器的光调制光谱研究
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TN215

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ANALYSIS OF GaAs/Al_xGa_(1-x) As MULTIPLE QUANTUM WELL INFRARED DETECTOR STRVCTURES USING PHOTOREFLECTANCE
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    摘要:

    运用光调制光谱方法测量了GaAs/AlxGa(1-x)As多量子阱红外探测器材料的调制反射谱,结果表明光调制光谱可以精确确定阱宽、Al组分、子带跃迁能量和探测峰值波长等许多重要参数,结合实验结果,采用Kronig-Penny模型对材料能带结构进行了理论计算,与实验结果相符.

    Abstract:

    Photoreflectance (PR) spectroscopy was used to analyze the GaAs/AlGaAs multiple quantum well (MQW) infrared detector structures. The result shows that the important parameters such as the well width, the aluminum composition x, the energy of intersubband transitions and peak wavelength of the detector can be exactly deterllilned by PR spectroscopy. The calculated energies of intersubband transition based on the Kronig-Penny model were compared and proved to be in agreement with the experimental results.

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杨立新,姜山,茅惠兵,陆卫,沈学础. GaAs/Al_xGa_(1-x)As多量子阱红外探测器的光调制光谱研究[J].红外与毫米波学报,1994,13(1):]. Yang Laxin, Jiang Shan, Mao Huibing, Lu Wei, Shen Xuechu. ANALYSIS OF GaAs/Al_xGa_(1-x) As MULTIPLE QUANTUM WELL INFRARED DETECTOR STRVCTURES USING PHOTOREFLECTANCE[J]. J. Infrared Millim. Waves,1994,13(1).]

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