The successful integration of GaAs LEDs on Si for fabrication of opto-electron- ic integrated circuits (OEIC) using the epitaxial lift-off technique is firstly reported in China. LEDs were fully processed after ELO transfer and can be integrated with large scale electronic circuits.
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肖德元,郭康瑾,李爱珍,徐少华,朱黎明.外延迁移技术制作光电子单片集成Si的GaAs/GaAlAs DH LED[J].红外与毫米波学报,1992,11(5):]. Xiao Deyuan, Guo Kangjin, Li Aizhen, Xu Shaohua, Zhu Liming. EPITAXIAL LIFT-OFF GaAs/GaAlAs DH LEDs ON Si FOR OEIC[J]. J. Infrared Millim. Waves,1992,11(5).]